2SB1188_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistor

RoHS
2SB1188
2SB1188 TRANSISTOR (PNP)
FEATURES
D _{Power dissipation}
P_CM:
0.5
T _{Collector current}
I_CM:
-2
.,L ^{Collector-base voltage}
W (Tamb=25℃)
A
V_(BR)CBO: -40
V
O Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR1
2
3. EMITTER
3
IC ^C _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
N _{Collector-base breakdown voltage}
V(BR)CBO
Ic=-50µA , IE=0
-40
V
O _{Collector-emitter breakdown voltage}
V(BR)CEO
IC= -1mA , IB=0
-32
V
R _{Emitter-base breakdown voltage}
V(BR)EBO
IE=-50µA, IC=0
-5
V
T _{Collector cut-off current}
ICBO
VCB=-20 V , IE=0
-1
µA
Emitter cut-off current
IEBO
VEB=-4 V , IC=0
-1
µA
C _{DC current gain *}
hFE
VCE=-3V, IC= -0.5A
82 390
E _{Collector-emitter saturation voltage *}
L _{Transition frequency}
E _{Output capacitance}
* Measured using pulse current.
VCe(sat)
fT
C_ob
IC=-2A, IB= -0.2A
VCE=-5V,
IC=-0.5A ,f=30MHz
VCB=-10V, IE=0 ,f=1MHz
-0.8
V
80
MHz
65
pF
EJ _{CLASSIFICATION OF hFE}
W^Rank
p
Q
R
Range
82-180
120-270
180-390
Marking
BCP
BCQ
BCR
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