2SB1185 Datasheet, PDF (1/1 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors

RoHS
2SB1185
2SB1185 TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _PCM:
2 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
-3 A
Collector-base voltage
O _V(BR)CBO:
-60 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-base breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
Emitter cut-off current
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter saturation voltage}
E _{Transition frequency}
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
Ic=-50µA, IE=0
Ic=-1mA, IB=0
IE=-50µA, IC=0
VCB=-40V, IE=0
VEB=-4V, IC=0
VCE=-3V, IC=-0.5A
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-5V, IC=-0.5A, f=30MHz
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-60
V
-50
V
5
V
-1
µA
-1
µA
60
320
-1
V
-1.5 V
70
MHz
50
pF
EJ _{CLASSIFICATION OF hFE(1)}
WRank
D
E
F
Range
60-120
100-200
160-320
Marking
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