2SB1132 Datasheet, PDF (1/1 Pages) Rohm – Medium Power Transistor

RoHS
2SB1132
2SB1132 TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _PCM:
0.5 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
-1 A
Collector-base voltage
O _{V(BR)CBO: -40 V}
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
Collector-emitter breakdown voltage
O _{Emitter-base breakdown voltage}
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
Collector-emitter saturation voltage
E _{Transition frequency}
L _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=-50µA, IE=0
Ic=-1mA, IB=0
IE=-50µA, IC=0
VCB=-20V, IE=0
VEB=-4V, IC=0
VCE=-3V, IC=-100mA
IC=-500mA, IB=-50mA
VCE=-5V, IC=-50mA, f=30MHz
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-40
V
-32
V
-5
V
-0.5 µA
-0.5 µA
82
390
-0.5 V
150
MHz
20
30
pF
E _{CLASSIFICATION OF hFE(1)}
J _Rank
E_Range
W^Marking
P
82-180
BAP
Q
120-270
BAQ
R
180-390
BAR
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