2SA950 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS)

RoHS
2SA950
2SA950 TRANSISTOR (PNP)
D FEATURE
Power dissipation
T _{PCM : 0.6 W (Tamb=25℃)}
.,L ^{Collector current}
I_{CM :} -0.8 A
Collector-base voltage
O _{V(BR)CBO : -35 V}
Operating and storage junction temperature range
C _{Tj, Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
O _{Collector-base breakdown voltage}
R _{Collector-emitter breakdown voltage}
T _{Emitter-base breakdown voltage}
C _{Collector cut-off current}
Emitter cut-off current
LE _{DC current gain}
E _{Collector-emitter saturation voltage}
J _{Collector Output Capacitance}
Symbol
Test conditions
MIN
V(BR)CBO
Ic= -1mA , IE=0
-35
V(BR)CEO
IC= -10 mA , IB=0
-30
V(BR)EBO
IE= -1Ma, IC=0
-5
ICBO
VCB= -35V, IE=0
IEBO
VEB= -5V, IC=0
hFE(1)
VCE=-1V, IC=-100mA
100
hFE(2)
VCE=-1V, IC= -700mA
35
VCE(sat)
IC= -500mA, IB= -20mA
VCB=-10V, IE=0
Cob
f=1MHZ
TYP
19
WE^{Transition frequency}
fT
VCE=-5V, IC=-10mA,
120
MAX
-0.1
-0.1
320
-0.7
UNIT
V
V
V
µA
µA
V
pF
MHz
CLASSIFICATION OF h_FE(1)
Rank
O
Y
Range
100-200
160-320
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