2SA935 Datasheet, PDF (1/1 Pages) TRANSYS Electronics Limited – TO-92L Plastic-Encapsulated Transistors

RoHS
2SA935
2SA935 TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _{PCM : 0.75 W (Tamb=25℃)}
.,L ^{Collector current}
I_CM : -0.7 A
Collector-base voltage
O _{V(BR)CBO : -80 V}
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Transition frequency}
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=-50µA, IE=0
Ic=-2mA, IB=0
IE=-50µA, IC=0
VCB=-50V, IE=0
VEB=-4V, IC=0
VCE=-3V, IC=-100mA
IC=-500mA, IB=-50mA
VCE=-10V, IC=-50mA
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-80
V
-80
V
-5
V
-0.5 µA
-0.5 µA
82
390
-0.4 V
100
MHz
20
pF
E _{CLASSIFICATION OF hFE(1)}
J _Rank
E_Range
W^Marking
P
82-180
Q
120-270
R
180-390
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