2SA933AS Datasheet, PDF (1/1 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors

RoHS
2SA933AS
WEJ ELECTRONIC CO.,LTD 2SA933AS TRANSISTOR(PNP)
FEATURES
Power dissipation
P_CM : 0.2 W (Tamb=25℃)
Collector current
I _CM : -0.15 A
Collector-base voltage
V_(BR)CBO : -60 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92S
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)CBO
Ic= -50µA , IE=0
-60
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1 mA , IB=0
-50
Emitter-base breakdown voltage
V(BR)EBO
IE=- 50µA, IC=0
-6
Collector cut-off current
ICBO
VCB=-60V, IE=0
Emitter cut-off current
IEBO
VEB= -6V, IC=0
DC current gain
hFE
VCE=-6 V, IC= -0.1A
120
Collector-emitter saturation voltage
Transition frequency
VCEsat
fT
IC= -50mA, IB=-5mA
VCE=-12V, IC=-2mA
120
F=30MHz
MAX
-0.1
-0.1
560
-0.5
UNIT
V
V
V
µA
µA
V
MHz
CLASSIFICATION OF h_FE
Rank
Q
R
S
Range
120-270
180-390
270-560
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