2SA844 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

RoHS
2SA844
2SA844 TRANSISTOR (PNP)
D _FEATURES
T _{Power dissipation}
.,L ^{PCM : 0.3 W (Tamb=25℃)}
Collector current
I_CM: -0.1 A
O Collector-base voltage
V_(BR)CBO : -55 V
C _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Symbol
Test conditions
MIN
O _{Collector-base breakdown voltage}
V(BR)CBO
Ic= -10µA , IE=0
-55
R _{Collector-emitter breakdown voltage}
V(BR)CEO
IC= -1mA , IB=0
-55
T _{Emitter-base breakdown voltage}
V(BR)EBO
IE= -10µA, IC=0
-5
C _{Collector cut-off current}
ICBO
VCB= -18V , IE=0
Emitter cut-off current
IEBO
VEB= -2 V , IC=0
E _{DC current gain}
hFE
VCE=-12V, IC= -2mA
160
L _{Collector-emitter saturation voltage}
VCE(sat)
IC= -10mA, IB= -1 mA
E _{Base-emitter voltage}
VBE(on)
VCE= -12V, IC= -2mA
J _{Transition frequency}
fT
VCE=-12V, IC= -2mA
150
TYP
MAX
-0.1
-0.05
800
-0.5
-0.75
UNIT
V
V
V
µA
µA
V
V
MHz
E_{CLASSIFICATION OF hFE}
W^Rank
C
D
E
Range
160-320
250-500
400-800
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