2SA836 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

RoHS
2SA836
2SA836 TRANSISTOR (PNP)
D _FEATURES
TO-92
T _{Power dissipation}
.,L ^{PCM : 0.2 W (Tamb=25℃)}
Collector current
O _{ICM: -0.1 A}
Collector-base voltage
C _{V(BR)CBO : -55 V}
Operating and storage junction temperature range
1. EMITTER
2. COLLECTOR
3. BASE
T_J, T_stg: -55℃ to +150℃
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
Symbol
Test conditions
MIN
123
TYP MAX
N _{Collector-base breakdown voltage}
V(BR)CBO
Ic= -10µA , IE=0
-55
O _{Collector-emitter breakdown voltage}
V(BR)CEO
IC= -1 mA , IB=0
-55
Emitter-base breakdown voltage
V(BR)EBO
IE= -10µA, IC=0
-5
R _{Collector cut-off current}
ICBO
VCB=-18V, IE=0
-0.1
T _{Emitter cut-off current}
IEBO
VEB= -2V , IC=0
-0.05
C _{DC current gain}
hFE
VCE=-12 V, IC= -2mA
160
500
E _{Collector-emitter saturation voltage}
VCEsat
IC= -10mA, IB= -1mA
-0.5
L _{Base-emitter voltage}
VBE(ON)
VCE=-12 V, IC= -2mA
-0.75
UNIT
V
V
V
µA
µA
V
V
E _{Transition frequency}
fT
VCE=-12 V, IC= -2mA
150
MHz
J _{Output capacitance}
WE^{Noise figure}
C_ob
VCE=-10V, IE=0,f=1 MHz
VCE=-6V, IC=0.1 mA,
NF
f=1 0Hz, RG=10KΩ
VCE=-6V, IC=0.1 mA,
f=1 kHz, RG=10KΩ
4
pF
5
dB
1
CLASSIFICATION OF hFE
Rank
Range
C
160-320
D
250-500
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