2SA821 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (PNP)

RoHS
2SA821
2SA821 TRANSISTOR (PNP)
D _FEATURES
T _{Power dissipation}
.,L ^{PCM : 0.25 W (Tamb=25℃)}
Collector current
O _{ICM : -0.03 A}
Collector-base voltage
C _{V(BR)CBO : -210 V}
Operating and storage junction temperature range
IC ^{TJ, Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
N _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
O _Parameter
R _{Collector-base breakdown voltage}
T _{Collector-emitter breakdown voltage}
C Emitter-base breakdown voltage
Collector cut-off current
E _{Emitter cut-off current}
L _{DC current gain}
E _{Collector-emitter saturation voltage}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCEsat
Test conditions
Ic= -50µA , IE=0
IC= -0.1 mA , IB=0
IE= -50µA, IC=0
VCB=-150V, IE=0
VEB= -4.5 V , IC=0
VCE=-3 V, IC= -5mA
IC= -2mA, IB= -0.2mA
MIN
-210
-210
-5
56
TYP
MAX
-1
-1
270
-0.6
UNIT
V
V
V
µA
µA
V
J _{Transition frequency}
fT
VCE=-5V, IC= -2mA
30
MHz
WE^{Output capacitance}
C_ob
VCE=-10V,IE=0,f=1MHz
12
pF
CLASSIFICATION OF hFE
Rank
N
P
Q
Range
56-120
82-180
120-270
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]