2SA812_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

RoHS
2SA812
2SA812 TRANSISTOR (PNP)
D _FEATURES
T _{Power dissipation}
.,L ^{PCM : 0.2 W (Tamb=25℃)}
Collector current
I_CM : -0.1 A
O Collector-base voltage
V_(BR)CBO : -60 V
C _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
NIC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
O _Parameter
Collector-base breakdown voltage
R _{Collector-emitter breakdown voltage}
T _{Emitter-base breakdown voltage}
C _{Collector cut-off current}
E _{Emitter cut-off current}
L _{DC current gain}
E _{Collector-emitter saturation voltage}
Base-emitter voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE
Test conditions
Ic=-100µA, IE=0
Ic= -1mA, IB=0
IE= -100µA, IC=0
VCB=- 60 V , IE=0
VEB= -5V , IC=0
VCE=- 6V, IC= -1mA
IC=-100 mA, IB= -10mA
IC=-1mA, VCE=-6V
MIN
-60
-50
-5
90
TYP
J _{Transition frequency}
fT
VCE=-6V, IC= -10mA
180
MAX UNIT
V
V
V
-0.1
µA
-0.1
µA
600
-0.3
V
-0.68
V
MHz
WE^{CLASSIFICATION OF hFE}
Marking
M4
M5
M6
M7
Range
90-180
135-270
200-400
300-600
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]