2SA673 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

RoHS
2SA673
2SA673 TRANSISTOR (PNP)
FEATURE
D _{Power dissipation}
T _{PCM : 0.4 W (Tamb=25℃)}
.,L Collector current
I_CM: -0.5 A
Collector-base voltage
V_(BR)CBO : -35 V
O _{Operating and storage junction temperature range}
C _{TJ, Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter voltage}
E _{*Measured using pulse}
Symbol
Test conditions
V(BR)CBO
Ic= -10µA , IE=0
V(BR)CEO
IC=-1 mA , IB=0
V(BR)EBO
IE=-10µA, IC=0
ICBO
VCB= -20 V , IE=0
hFE(1)*
VCE=-3V, IC= -10mA
hFE(2)
VCE=-3 V, IC=-500mA
VCEsat * IC= -150mA, IB=-15mA
VBE
VCE=-3 V, IC=-10mA
MIN
-35
-35
-4
60
10
TYP
MAX
-0.5
320
-0.6
-0.75
UNIT
V
V
V
µA
V
V
J CLASSIFICATION OF hFE(1)
Rank
WE^Range
B
60-120
C
100-200
D
160-320
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