2SA608N Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – Low-Frequency General-Purpose Amplifier Applications

RoHS
2SA608N
2SA608N TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _{PCM : 0.5 W (Tamb=25℃)}
.,L ^{Collector current}
I_CM : -0.15 A
Collector-base voltage
O _{V(BR)CBO : -60 V}
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-base breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
Emitter cut-off current
EC _{DC current gain}
L _{Collector-emitter saturation voltage}
E _{Base-emitter saturation voltage}
Transition frequency
J _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
Ic=-10µA, IE=0
Ic=-1mA, IB=0
IE=-10µA, IC=0
VCB=-40V, IE=0
VEB=-5V, IC=0
VCE=-6V, IC=-1mA
VCE=-6V, IC=-0.1mA
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCE=-6V, IC=-10mA
VCB=-6V, IE=0, f=1MHz
MIN TYP MAX UNIT
-60
V
-50
V
-6
V
-0.1 µA
-0.1 µA
160
560
70
-0.3 V
-1
V
200
MHz
3
pF
WE_{CLASSIFICATION OF hFE(1)}
Rank
F
G
Range
160-320
280-560
Marking
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