2SA608 Datasheet, PDF (1/1 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors

RoHS
2SA608
2SA608 TRANSISTOR (PNP)
FEATURES
D _{Power dissipation}
T _{PCM : 400 mW (Tamb=25℃)}
.,L Collector current
I_CM : -100 mA
Collector-base voltage
V_(BR)CBO : -40 V
O _{Operating and storage junction temperature range}
C _{TJ, Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
Emitter-Base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Test conditions
Ic=-100µA, IE=0
Ic=-1mA, IB=0
IE=-100µA, IC=0
VCB=-25V, IE=0
VEB=-4V, IC=0
VCE=-6V, IC=-1mA
IC=-50mA, IB=-5mA
VCE=-6V, IC=-10mA
VCB=-6V, f=1MHz
MIN
TYP
-40
-30
-5
60
180
7
MAX UNIT
V
V
V
-1
µA
-1
µA
560
-0.5
V
MHz
pF
E _{CLASSIFICATION OF hFE}
J _Rank
D
WE^Range
60-120
E
100-200
F
160-320
G
280-560
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