2SA562 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors

RoHS
2SA562
2SA562 TRANSISTOR (PNP)
D FEATURE
Power dissipation
T _{PCM : 0.5 W (Tamb=25℃)}
.,L ^{Collector current}
I_{CM :} -0.5 A
Collector-base voltage
O _{V (BR) CBO: -35 V}
Operating and storage junction temperature range
C _{Tstg: -55℃ to +150℃}
IC ^{TJ : 150℃}
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
N _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
O _Parameter
R Collector-base breakdown voltage
Collector-emitter breakdown voltage
T _{Emitter-base breakdown voltage}
C _{Collector cut-off current}
E _{Emitter cut-off current}
L _{DC current gain}
E _{Collector-emitter saturation voltage}
Base-emitter voltage
WEJ ^{Transition frequency}
Symbol
Test conditions
MIN
V(BR)CBO
Ic= -100µA , IE=0
-35
V(BR)CEO
IC= -1mA , IB=0
-30
V(BR)EBO
IE= -100µA, IC=0
-5
ICBO
VCB=-35V , IE=0
IEBO
VEB= -5V , IC=0
hFE
VCE=-1 V, IC=-100mA
70
VCE(sat)
IC= -100mA, IB= -10 mA
VBE(on)
fT
VCE=- 1V, IC=-100 mA
VCE= -6 V, IC= -20mA
200
F=30MHz
TYP
MAX
-0.1
-0.1
240
-0.25
-1
UNIT
V
V
V
µA
µA
V
V
MHz
CLASSIFICATION OF hFE
Rank
O
Y
Range
h_FE(1)
70-140
120-240
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]