2SA1740 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – High-Voltage Driver Applications

RoHS
2SA1740
2SA1740 TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _{PCM : 500 mW (Tamb=25℃)}
.,L ^{Collector current}
I_CM : -200 mA
Collector-base voltage
O _{V(BR)CBO : -400 V}
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O Collector-emitter breakdown voltage
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
Base-emitter saturation voltage
L _{Transition frequency}
E _{Collector output capacitance}
J _{Turn-ON Time}
Turn-OFF Time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
fT
Cob
ton
toff
Test conditions
Ic=-10µA, IE=0
Ic=-1mA, IB=0
IE=-10µA, IC=0
VCB=-300V, IE=0
VEB=-4V, IC=0
VCE=-10V, IC=-50mA
IC=-50mA, IB=-5mA
IC=-50mA, IB=-5mA
VCE=-30V, IC=-10mA
VCB=-30V, IE=0, f=1MHz
VCC=-150V, Ic=-50mA,
IB1=-IB2=-5mA
MIN TYP MAX UNIT
-400
V
-400
V
-5
V
-0.1 µA
-0.1 µA
60
200
-0.8 V
-1
V
70
MHz
5
pF
0.25
µs
5
µs
WE^{CLASSIFICATION OF hFE(1)}
Rank
D
E
Range
60-120
100-200
Marking
AK
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