2SA1700 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – High-Voltage Driver Applications

RoHS
2SA1700
2SA1700 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _{PCM : 1 W (Tamb=25℃)}
.,L ^{Collector current}
I_CM : -200 mA
Collector-base voltage
O _{V(BR)CBO : -400 V}
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-251
1. BASE
2. COLLECTOR
3. EMITTER
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-base breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
C _{Emitter cut-off current}
DC current gain
E _{Collector-emitter saturation voltage}
L _{Base-emitter saturation voltage}
E _{Transition frequency}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
fT
Test conditions
Ic=-10µA, IE=0
Ic=-1mA, IB=0
IE=-10µA, IC=0
VCB=-300V, IE=0
VEB=-4V, IC=0
VCE=-10V, IC=-50mA
IC=-50mA, IB=-5mA
IC=-50mA, IB=-5mA
VCE=-30V, IC=-10mA
MIN TYP MAX UNIT
-400
V
-400
V
-5
V
-0.1 µA
-0.1 µA
60
200
-0.6 V
-1
V
70
MHz
J _{CLASSIFICATION OF hFE(1)}
ERank
W^Range
D
60-120
E
100-200
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