2SA1664 Datasheet, PDF (1/1 Pages) TRANSYS Electronics Limited – SOT-89 Plastic-Encapsulated Transistors

RoHS
2SA1664
2SA1664 TRANSISTOR (PNP)
FEATURES
D _{Power dissipation}
T P_CM : 0.5 W (Tamb=25℃)
Collector current
.,L ^{ICM : -0.8 A}
Collector-base voltage
V_(BR)CBO : -35 V
O Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
IC ^C _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-base breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
Emitter cut-off current
EC _{DC current gain}
L _{Collector-emitter saturation voltage}
E _{Base-emitter voltage}
Transition frequency
J _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=-1mA, IE=0
Ic=-10mA, IB=0
IE=-1mA, IC=0
VCB=-35V, IE=0
VEB=-5V, IC=0
VCE=-1V, IC=-100mA
VCE=-1V, IC=-700mA
IC=-500mA, IB=-20mA
VCE=-1V, IC=-10mA
VCE=-5V, IC=-10mA
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-35
V
-30
V
-5
V
-0.1 µA
-0.1 µA
100
320
35
-0.7 V
-0.5
-0.8 V
120
MHz
19
pF
WE^{CLASSIFICATION OF hFE(1)}
Rank
O
Y
Range
100-200
160-320
Marking
RO
RY
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