2SA1611_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

RoHS
2SA1611
2SA1611 TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _{PCM : 0.15 W (Tamb=25℃)}
.,L ^{Collector current}
I_CM : -0.1 A
Collector-base voltage
O _{V(BR)CBO : -60 V}
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
1. 25¡ À0. 05
2. 30¡ À0. 05
Unit: mm
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-base breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
C _{Emitter cut-off current}
DC current gain
E _{Collector-emitter saturation voltage}
L _{Base-emitter voltage}
E _{Transition frequency}
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=-100µA, IE=0
Ic=-1mA, IB=0
IE=-100µA, IC=0
VCB=-60V,IE=0
VEB=-5V,IC=0
VCE=-6V, IC=-1mA
IC=-100mA, IB=-10mA
VCE=-6V, IC=-1mA
VCE=-6V, IC=-10mA
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-60
V
-50
V
-5
V
-0.1 µA
-0.1 µA
90
600
-0.3 V
-0.58
-0.68 V
180
MHz
4.5
pF
EJ _{CLASSIFICATION OF hFE(1)}
Rank
M4
W_Range
90-180
M5
135-270
M6
200-400
M7
300-600
Marking
M4
M5
M6
M7
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]