2SA1464 Datasheet, PDF (1/1 Pages) NEC – HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD

RoHS
2SA1464
2SA1464 TRANSISTOR (PNP)
WEJ ELECTRONIC CO.,LTD FEATURES
Power dissipation
P_CM : 0.2 W (Tamb=25℃)
Collector current
I_CM : -0.5 A
Collector-base voltage
V_(BR)CBO : -60 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-23-3L
1. EMITTER
2. BASE
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Ouput Capacitance
Turn-on Time
Storage Time
Turn-on Time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(on)
fT
Cob
ton
tstg
Toff
Test conditions
Ic=-100µA, IE=0
Ic= -1mA, IB=0
IE= -100µA, IC=0
VCB=- 40 V , IE=0
VEB= -4V , IC=0
VCE=- 2V, IC= -150mA
VCE=- 2V, IC= -500mA
IC=-500 mA, IB= -50mA
IC=-500mA, VCE=-50V
VCE=-10V, IC= -20mA
VCB=-10V, IE=-20mA
VCC=-30V
IC=150mA
IB1=-IB2=15mA
MIN
-60
-40
-5
75
20
150
TYP
140
50
-0.45
-1.0
400
5.0
MAX
-0.1
-0.1
300
UNIT
V
V
V
µA
µA
-0.75
-1.3
8.0
35
225
255
V
V
MHz
pF
ns
ns
ns
CLASSIFICATION OF hFE(1)
Marking
Range
Y12
75-150
Y13
100-200
Y14
150-300
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]