2SA1371 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – High-Definition CRT Display, Video Output Applications

RoHS
2SA1371
2SA1371 TRANSISTOR (PNP)
TO-92MOD
D FEATURES
Power dissipation
T _{PCM : 1 W (Tamb=25℃)}
.,L ^{Collector current}
I_CM : -0.1 A
Collector-base voltage
O _{V(BR)CBO : -300 V}
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter saturation voltage}
Transition frequency
E _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
Ic=-10µA, IE=0
Ic=-1mA, IB=0
IE=-10µA, IC=0
VCB=-200V, IE=0
VEB=-4V, IC=0
VCE=-10V, IC=-10mA
IC=-20mA, IB=-2mA
IC=-20mA, IB=-2mA
VCE=-30V, IC=-10mA
VCB=-30V, IE=0, f=1MHz
MIN TYP MAX UNIT
-300
V
-300
V
-5
V
-0.1 µA
-0.1 µA
40
320
-0.6 V
-1
V
100
MHz
5
pF
J _{CLASSIFICATION OF}
E_Rank
W^Range
h_FE(1)
C
40-80
D
60-120
E
100-200
F
160-320
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