2SA1357 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (STROBE FLASH, AUDIO POWER AMPLIFIER APPLICATIONS)

RoHS
2SA1357
2SA1357 TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _{PCM : 1.5 W (Tamb=25℃)}
.,L ^{Collector current}
I_CM : -5 A
Collector-base voltage
O _{V(BR)CBO : -35 V}
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-126C
1. EMITTER
2. COLLECTOR
3. EMITTER
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-base breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
Emitter cut-off current
EC _{DC current gain}
L _{Collector-emitter saturation voltage}
E _{Base-emitter voltage}
Transition frequency
J _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=-1mA, IE=0
Ic=-10mA, IB=0
IE=-1mA, IC=0
VCB=-35V, IE=0
VEB=-8V, IC=0
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-4A
IC=-4A, IB=-0.1A
VCE=-2V, IC=-4A
VCE=-2V, IC=-0.5A
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-35
V
-20
V
-8
V
-100 µA
-100 µA
100
320
70
-1
V
-1.5 V
170
MHz
62
pF
WE^{CLASSIFICATION OF hFE(1)}
Rank
O
Y
Range
100-200
160-320
Marking
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