2SA1309A Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

RoHS
2SA1309A
2SA1309A TRANSISTOR (PNP)
FEATURES
D _{Power dissipation}
T P_CM : 0.3 W (Tamb=25℃)
Collector current
.,L ^{ICM : -0.1 A}
Collector-base voltage
V_(BR)CBO : -60 V
O Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92S
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ^{C ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
Collector-emitter breakdown voltage
O _{Emitter-base breakdown voltage}
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
Collector-emitter saturation voltage
E _{Transition frequency}
L _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=-10µA, IE=0
Ic=-2mA, IB=0
IE=-10µA, IC=0
VCB=-10V, IE=0
VEB=-10V, IC=0
VCE=-10V, IC=-2mA
IC=-50mA, IB=-5mA
VCE=-10V, IC=-1mA, f=200MHz
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-60
V
-50
V
-7
V
-0.1 µA
-1
µA
160
460
-0.3 V
80
MHz
3.5
pF
E _{CLASSIFICATION OF hFE(1)}
J _Rank
Q
E_Range
160-260
W^Marking
R
210-340
S
290-460
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