2SA1300 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (STROBO FLASH MEDIUM POWER AMPLIFIER APPLICATIONS)

RoHS
2SA1300
2SA1300 TRANSISTOR (PNP)
FEATURES
D _{Power dissipation}
T P_CM : 0.75 W (Tamb=25℃)
Collector current
.,L ^{ICM : -2}
A
Collector-base voltage
V_(BR)CBO : -20
V
Operating and storage junction temperature range
O _{TJ : 150℃}
C _{Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
O _{Collector-base breakdown voltage}
R _{Collector-emitter breakdown voltage}
T _{Emitter-base breakdown voltage}
Collector cut-off current
C _{Emitter cut-off current}
E _{DC current gain}
L _{Collector-emitter saturation voltage}
E _{Base-emitter voltage}
J _{Transition frequency}
WE^{CLASSIFICATION OF hFE}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
Test conditions
Ic=-1mA , IE=0
IC=-10mA , IB=0
IE=-1mA, IC=0
VCB=-20 V , IE=0
VEB=-6 V , IC=0
VCE=-1V, IC=-0.5A
IC=-2A, IB= -100mA
IC= -2A, VCE=-1V
VCE=-1V, IC= -0.5A
f = 30MHz
MIN MAX UNIT
-20
V
-10
V
-6
V
-0.1 µA
-0.1 µA
140 600
-0.5
V
-1.5
V
100
MHz
Rank
Range
Y
140-280
GR
200-400
BL
300-600
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