2SA1296 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

RoHS
2SA1296
2SA1296 TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _{PCM : 0.75 W (Tamb=25℃)}
.,L ^{Collector current}
I_CM : -2 A
Collector-base voltage
O _{V(BR)CBO : -20 V}
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-base breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
Emitter cut-off current
EC _{DC current gain}
L _{Collector-emitter saturation voltage}
E _{Base-emitter voltage}
Transition frequency
J _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=-0.1mA, IE=0
Ic=-10mA, IB=0
IE=-0.1mA, IC=0
VCB=-20V, IE=0
VEB=-6V, IC=0
VCE=-2V, IC=-0.1A
VCE=-2V, IC=-2A
IC=-2A, IB=-0.1A
VCE=-2V, IC=-0.1A
VCE=-2V, IC=-0.5A
VCB=-10V, IE=0,f=1MHz
MIN TYP MAX UNIT
-20
V
-20
V
-6
V
-0.1
µA
-0.1
µA
120
400
40
-0.5
V
-0.85 V
120
MHz
40
pF
WE^{CLASSIFICATION OF hFE(1)}
Rank
Y
GR
Range
120-240
200-400
Marking
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