2SA1283 Datasheet, PDF (1/1 Pages) Isahaya Electronics Corporation – SILICON PNP 2SA1283

RoHS
2SA1283
2SA1283 TRANSISTOR (PNP)
D _FEATURE
T _{Power dissipation}
.,L ^{PCM : 0.9 W (Tamb=25℃)}
Collector current
I_CM : -1 A
O Collector-base voltage
V_(BR)CBO : -60 V
C Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
123
NIC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
Symbol
Test conditions
MIN
O _{Collector-base breakdown voltage}
V(BR)CBO
Ic= -10µA , IE=0
-60
R _{Collector-emitter breakdown voltage}
V(BR)CEO
IC=-2mA , IB=0
-60
T _{Emitter-base breakdown voltage}
V(BR)EBO
IE= -10µA, IC=0
-6
C _{Collector cut-off current}
ICBO
VCB= -50 V, IE=0
E _{Emitter cut-off current}
IEBO
VEB= -4 V, IC=0
L _{DC current gain}
hFE
VCE=-4 V, IC= -100mA
55
E _{Collector-emitter saturation voltage}
VCEsat
IC= -500 mA, IB=-25 mA
MAX
-0.2
-0.2
300
-0.3
J _{Transition frequency}
fT
VCE=-2V, IC= -10mA
50
WE^{Output capacitance}
C_ob
VCE=-10V, IE=0,f=1 MHz
25
UNIT
V
V
V
µA
µA
V
MHz
pF
CLASSIFICATION OF h_FE
Rank
C
D
E
Range
55-110
90-180
150-300
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