2SA1235A_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – PNP Silicon Plastic Encapsulated Transistor

RoHS
2SA1235A
2SA1235A TRANSISTOR (PNP)
D _FEATURES
T _{Power dissipation}
.,L ^{PCM : 0.2 W (Tamb=25℃)}
Collector current
I_CM : -0.2 A
O _{Collector-base voltage}
V_(BR)CBO : -60
V
C _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
NIC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
O _Parameter
Collector-base breakdown voltage
R _{Collector-emitter breakdown voltage}
T _{Emitter-base breakdown voltage}
C _{Collector cut-off current}
E _{Emitter cut-off current}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Test conditions
Ic= -100 µA, IE=0
Ic= -0.1 mA, IB=0
IE= -100µA, IC=0
VCB=-60 V , IE=0
VEB= -6V , IC=0
MIN
-60
-50
-6
L _{DC current gain}
E _{Collector-emitter saturation voltage}
J _{Base-emitter voltage}
hFE(1)
VCE=-6V, IC= -1mA
150
hFE(2)
VCE=-6V, IC= -0.1mA
90
VCE(sat)
IC=-100 mA, IB= -10mA
VBE(sat)
IC= -100mA, IB= -10mA
MAX UNIT
V
V
V
-0.1 µA
-0.1 µA
500
-0.3
V
-1
V
WE^{Transition frequency}
fT
VCE=-6V, IC= -10mA
180
MHz
CLASSIFICATION OF hFE₍₁₎
Marking
Range
M·E
150-300
WEJ ELECTRONIC CO. Http:// www.wej.cn
M·F
250-500
E-mail:[e-mail]