2SA1203_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

RoHS
2SA1203
2SA1203 TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _{PCM : 0.5 W (Tamb=25℃)}
.,L ^{Collector current}
I_CM : -1.5 A
Collector-base voltage
O _{V(BR)CBO : -30 V}
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-base breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
Emitter cut-off current
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter voltage}
E _{Transition frequency}
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=-1mA, IE=0
Ic=-10mA, IB=0
IE=-1mA, IC=0
VCB=-30V, IE=0
VEB=-5V, IC=0
VCE=-2V, IC=-500mA
IC=-1.5A, IB=-30mA
VCE=-2V, IC=-500mA
VCE=-2V, IC=-500mA
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-30
V
-30
V
-5
V
-0.1 µA
-0.1 µA
100
320
-2
V
-1
V
120
MHz
50 pF
EJ _{CLASSIFICATION OF hFE(1)}
W^Rank
O
Y
Range
100-200
160-320
Marking
HO1
HY1
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