2SA1201_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

RoHS
2SA1201
2SA1201 TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _{PCM : 500 mW (Tamb=25℃)}
.,L ^{Collector current}
I_CM : -800 mA
Collector-base voltage
O _{V(BR)CBO : -120 V}
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O Collector-emitter breakdown voltage
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
Base-emitter voltage
L _{Transition frequency}
E _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=-1mA, IE=0
Ic=-10mA, IB=0
IE=-1mA, IC=0
VCB=-120V, IE=0
VEB=-5V, IC=0
VCE=-5V, IC=-100mA
IC=-500mA, IB=-50mA
VCE=-5V, IC=-500mA
VCE=-5V, IC=-100mA
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-120
V
-120
V
-5
V
-0.1 µA
-0.1 µA
80
240
-1
V
-1
V
120
MHz
30
pF
J _{CLASSIFICATION OF hFE(1)}
E_Rank
W^Range
O
80-160
Y
120-240
Marking
DO
DY
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