2SA1160 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

RoHS
2SA1160
2SA1160 TRANSISTOR (PNP)
D _FEATURE
T _{Power dissipation}
.,L ^{PCM : 0.9 W (Tamb=25℃)}
Collector current
I_CM: -2A
O Collector-base voltage
V_(BR)CBO: -20 V
C Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
O _{Collector-base breakdown voltage}
R _{Collector-emitter breakdown voltage}
T _{Emitter-base breakdown voltage}
C Collector cut-off current
Emitter cut-off current
LE _{DC current gain}
E _{Collector-emitter saturation voltage}
J _{Transition frequency}
WE^{Output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
fT
C_ob
Test conditions
Ic= -1mA , IE=0
IC=-10mA , IB=0
IE= -1mA, IC=0
VCB= -20 V, IE=0
VEB= -6 V, IC=0
VCE=-1V, IC= -0.5A
VCE=-1V, IC= -4A
IC= -2A, IB=-50mA
VCE=-1V, IC= -0.5A
VCE=-10V, IE=0,f=1 MHz
MIN
-20
-10
-6
140
60
TYP
-0.2
140
50
MAX
-0.1
-0.1
600
UNIT
V
V
V
µA
µA
-0.5
V
MHz
pF
CLASSIFICATION OF h_FE
Rank
Range
A
140-280
B
200-400
C
300-600
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