2SA1020 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

RoHS
2SA1020
2SA1020 TRANSISTOR (PNP)
TO-92MOD
D FEATURES
Power dissipation
T _{PCM : 900 mW (Tamb=25℃)}
.,L ^{Collector current}
I_CM : -2 A
Collector-base voltage
O _{V(BR)CBO : -50 V}
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter saturation voltage}
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
fT
Test conditions
Ic=-100µA, IE=0
Ic=-1mA, IB=0
IE=-100 µA, IC=0
VCB=-50 V, IE=0
VEB=-5 V, IC=0
VCE=-2 V, IC=-500 A
IC=-1A, IB=-50 mA
IC=-1 A, IB=-50 mA
VCE=-2 V, IC=-500 mA
MIN TYP MAX UNIT
-50
V
-50
V
-5
V
-1
µA
-1
µA
70
240
-0.5 V
-1.2 V
100
MHz
E _{CLASSIFICATION OF hFE(1)}
J _Rank
WE^Range
O
70-140
Y
120-240
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