2SA1013 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (COLOR TV VERT. DEFELCTION OUTPUT APPLICATIONS)

RoHS
2SA1013
2SA1013 TRANSISTOR (PNP)
D FEATURE
Power dissipation
T _{PCM : 0.9 W (Tamb=25℃)}
.,L ^{Collector current}
I_CM: -1A
Collector-base voltage
O _{V(BR)CBO : -160 V}
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-base breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
C _{Collector cut-off current}
E _{Emitter cut-off current}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
Test conditions
Ic= -100µA , IE=0
IC= -1 mA , IB=0
IE= -10 Μa, IC=0
VCB= -150 V, IE=0
VCE= -120 V, IB=0
VEB= -6V, IC=0
MIN
-160
-160
-6
EL ^{DC current gain}
hFE(1)
VCE=-5 V, IC= -200mA
65
hFE(2)
VCE=-5V, IC= -50mA
40
J _{Collector-emitter saturation voltage}
VCE(sat)
IC= -500 mA, IB= -50 mA
Base-emitter voltage
WE^{Transition frequency}
VBE
IC= -5 mA, VCE= -5V
VCE= -5 V, IC= -200mA
fT
15
MAX
-1
-10
-1
310
-1.5
-0.75
UNIT
V
V
V
µA
µA
µA
V
V
MHz
f = 30MHz
CLASSIFICATION OF hFE₍₁₎
Rank
R
O
Y
Range
60-120
120-200
200-300
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]