2N7002T Datasheet, PDF (1/2 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

RoHS
2N7002T
2N7002T MOSFET ( N-Channel )
SOT-523
FEATURES
D _{Power dissipation}
T _{PD: 0.15 W (Tamb=25℃)}
.,L Collector current
I_D: 115 mA
Collector-base voltage
O _{VDS: 60 V}
Operating and storage junction temperature range
1. GATE
2. SOURCE
3. DRAIN
C _{TJ,Tstg: -55℃ to +150℃}
Marking: 72
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Drain-Source Breakdown Voltage *
O _{Gate-Threshold Voltage*}
Gate-body Leakage*
R _{Zero Gate Voltage Drain Current *}
CT On-state Drain Current *
Drain-Source On-Resistance *
E _{Forward Tran conductance *}
L _{Input Capacitance}
Output Capacitance
E _{Reverse Transfer Capacitance}
Symbol
V_(BR)DSS
V_th(GS)
l_GSS
I_DSS
I_D(ON)
R_DS(0n)
g_FS
C_iSS
C_OSS
C_rSS
Test conditions
V_GS=0V,I_D=10µA
V_DS=V_GS, I_D=250µA
V_DS=0V, V_GS=±20V
V_DS=60V, V_GS=0V
V_DS=60V,V_GS=0V,T_j=125℃
V_GS=10V, V_DS=7.5V
V_GS=5V, I_D=50mA
V_GS=10V, I_D=500mA
V_DS=10V, I_D=200mA
V_DS=25V, V_GS=0V
f=1MHz
MIN
60
1
500
80
TYP MAX
2
±10
1
500
1000
3.2
7.5
4.4
13.5
22
50
11
25
2
5
UNIT
V
nA
µA
mA
Ω
ms
pF
J _SWITCHING
ETurn-on Time
W^{Turn-off Time}
T_D(ON)
T_D(OFF)
V_DD=30V,R_L=150
I_D=200mA,V_GEN=10V
R_GEN=25Ω
7
20
ns
11
20
* Pulse test.
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