 English |
|
|
|
|
|
|
|
| 2N7002 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
| |||
|
RoHS
2N7002
2N7002 MOSFET (N-Channel)
FEATURES
z High density cell design for low RDS(ON)
z Voltage controlled small signal switch
z Rugged and reliable
z High saturation current capability
SOT-23
1. GATE
2. SOURCE
3. DRAIN
Marking: 7002
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value
Units
VDS
Drain-Source voltage
60
V
ID
Drain Current
115
mA
PD
Power Dissipation
225
mW
RÓ¨JA
Thermal Resistance, junction to Ambient
556
â/W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-body Leakage
Zero Gate Voltage Drain Current
On-state Drain Current
Drain-Source On-Resistance
Forward Trans conductance
Drain-source on-voltage
Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING TIME
Turn-on Time
Turn-off Time
Symbol
Test conditions
V(BR)DSS
Vth(GS)
lGSS
IDSS
ID(ON)
rDS(0n)
gfs
VDS(on)
VSD
Ciss
COSS
CrSS
VGS=0 V, ID=10 μA
VDS=VGS, ID=250 μA
VDS=0 V, VGS=±25 V
VDS=60 V, VGS=0 V
VGS=10 V, VDS=7 V
VGS=10 V, ID=500mA
VGS=5 V, ID=50mA
VDS=10 V, ID=200mA
VGS=10V, ID=500mA
VGS=5V, ID=50mA
IS=115mA, VGS=0 V
VDS=25V, VGS=0V, f=1MHz
td(on)
td(off)
VDD=25 V, RL=50Ω
ID=500mA,VGEN=10 V
RG=25 Ω
MIN
60
1
500
1
1
80
0.5
0.05
0.55
TYP MAX UNIT
V
2.5
±80
nA
80
nA
mA
7.5
â¦
7.5
500
ms
3.75
V
0.375
V
1.2
V
50
25
pF
5
20
ns
40
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese