2N6727 Datasheet, PDF (1/1 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors

RoHS
2N6727
2N6727 TRANSISTOR (PNP)
D _FEATURES
T _{Power dissipation}
.,L ^{PCM : 1 W(Tamb=25℃)}
Collector current
I_CM : -1.5 A
O Collector-base voltage
V_(BR)CBO : -50 V
C _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
O _{Collector-base breakdown voltage}
R _{Collector-emitter breakdown voltage}
T _{Emitter-base breakdown voltage}
C _{Collector cut-off current}
Collector cut-off current
E _{Emitter cut-off current}
EL _{DC current gain}
EJ _{Collector-emitter saturation voltage}
W^{Base-emitter voltage}
Symbol
Test conditions
V(BR)CBO
Ic= -1 mA, IE=0
V(BR)CEO
IC= -10 mA , IB=0
V(BR)EBO
IE= -1 mA, IC=0
ICBO
VCB= -50 V, IE=0
ICEO
VCB= -40 V, IB=0
IEBO
VEB= -5 V, IC=0
HFE(1)
VCE=-1 V, IC= -1 A
HFE(2)
VCE=-1 V, IC= -10 mA
HFE(3)
VCE=-1 V, IC= -100 mA
VCE(sat)
IC= -1 A, IB= -100 mA
VBE(on)
VCE= -1 V, IC= -1 A
MIN
-50
-40
-5
50
55
60
TYP
MAX
-0.1
-1
-0.1
250
UNIT
V
V
V
µA
µA
µA
-0.5
V
-1.2
V
Transition frequency
fT
VCE=-10 V , IC= -50 mA 50
MHz
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