2N6520 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

RoHS
2N6520
2N6520 TRANSISTOR (PNP)
D _FEATURES
T _{Power dissipation}
.,L ^{PCM : 0.625 W (Tamb=25℃)}
Collector current
I_CM : -0.5
A
O _{Collector-base voltage}
V_(BR)CBO : -350
V
C _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
O _{Collector-base breakdown voltage}
R _{Collector-emitter breakdown voltage}
T _{Emitter-base breakdown voltage}
C _{Collector cut-off current}
Emitter cut-off current
LE _{DC current gain}
J ^E _{Collector-emitter saturation voltage}
WE^{Base-emitter saturation voltage}
Symbol
Test conditions
MIN
V(BR)CBO
V(BR)CEO^*
V(BR)EBO
ICBO
Ic= -100 µA , IE=0
IC= -1 mA , IB=0
IE= -10 µA, IC=0
VCB= -250 V , IE=0
-350
-350
-5
IEBO
VEB= -4 V , IC=0
VCE=-10 V, IC= -1 mA
20
VCE=-10 V, IC= -10 mA
30
hFE
VCE=-10 V, IC= -30 mA
30
VCE=-10 V, IC= -50 mA
20
VCE=-10 V, IC= -100 mA 15
IC= -10 mA, IB= -1 mA
VCE(sat)
IC= -20 mA, IB= -2 mA
IC= -30 mA, IB= -3 mA
IC= -50 mA, IB= -5 mA
IC= -10 mA, IB= -1 mA
VBE(sat)
IC= -20 mA, IB= -2 mA
IC= -30 mA, IB= -3 mA
TYP
MAX
-0.05
-0.05
UNIT
V
V
V
µA
µA
200
200
-0.3
-0.35
V
-0.5
-1
-0.75
-0.85
V
-0.9
Base-emitter voltage
VBE(on)
VCE=-10V, IC= -100 mA
-2
V
Transition frequency
f
*
T
VCE=-20 V, IC= -10 mA
40
f =20 MHz
200
MHz
* Pulse test, Pulse width≤300µs, Duty cycle≤2%.
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