2N6517 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

RoHS
2N6517
2N6517 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _{PCM : 625 mW (Tamb=25℃)}
.,L ^{Collector current}
I_CM : 500 mA
Collector-base voltage
O _{V(BR)CBO : 350 V}
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
Emitter-base breakdown voltage
R _{Collector cut-off current}
Emitter cut-off current
CT _{DC current gain}
ELE _{Collector-emitter saturation voltage}
WEJ ^{Base-emitter saturation voltage}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)(1)
VCE(sat)(2)
VCE(sat)(3)
VCE(sat)(4)
VBE(sat)(1)
VBE(sat)(2)
VBE(sat)(3)
Test conditions
Ic=100 µA, IE=0
Ic=1 mA, IB=0
IE= 10 µA, IC=0
VCB=250 V, IE=0
VEB=5 V, IC=0
VCE=10 V, IC=1 mA
VCE=10 V, IC=10 mA
VCE=10 V, IC=30 mA
VCE=10V, IC=50 mA
VCE=10V, IC=100 mA
IC=10 mA, IB=1 mA
IC=20 mA, IB=2 mA
IC=30 mA, IB=3 mA
IC=50 mA, IB=5 mA
IC=10 mA, IB=1 mA
IC=20 mA, IB=2 mA
IC=30 mA, IB=3 mA
MIN TYP MAX UNIT
350
V
350
V
6
V
50 nA
50 nA
20
30
30
200
20
200
15
0.3 V
0.35 V
0.5 V
1
V
0.75 V
0.85 V
0.9 V
Base-emitter voltage
VBE
VCE= 20V, IC=10 mA
Transition frequency
fT
VCE=10 V, IC=100 mA
40
200 MHz
Collector output capacitance
Cob
VCB=20 V, IE=0, f=1 MHz
6
pF
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