2N5551 Datasheet, PDF (1/1 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

RoHS
2N5551
2N5551 _FEATURES
TRANSISTOR (NPN)
D _{Power dissipation}
T _{PCM : 0.625 W (Tamb=25℃)}
.,L Collector current
I_CM: 0.6 A
Collector-base voltage
V_(BR)CBO : 180 V
O _{Operating and storage junction temperature range}
C _{TJ, Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
IC ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
N _{Collector-base breakdown voltage}
O _{Collector-emitter}
voltage
breakdown
R _{Emitter-base breakdown voltage}
V(BR)CBO
V(BR)CEO
V(BR)EBO
T _{Collector cut-off current}
ICBO
Emitter cut-off current
IEBO
C_hFE(1)
E _{DC current gain}
hFE(2)
L _hFE(3)
E _{Collector-emitter saturation voltage VCEsat}
J _{Base-emitter saturation voltage}
VBEsat
Test conditions
Ic= 100 µA, IE=0
Ic= 100 µA, IB=0
IE= 100 µA, IC=0
VCB= 180 V, IE=0
VEB= 4 V, IC=0
VCE= 5 V, IC= 1 mA
VCE= 5 V, IC = 10 mA
VCE= 5 V, IC= 50 mA
IC= 50 mA, IB= 5 mA
IC= 50 mA, IB= 5 mA
MIN TYP MAX
180
160
6
0.1
0.1
80
80
250
50
0.5
1
E_{Transition frequency}
W^{CLASSIFICATION OF hFE(2)}
fT
VCE= 5 V,IC= 10 mA, f =30MHz 80
UNIT
V
V
V
µA
µA
V
V
MHz
Rank
A
B
C
Range
80-160
120-180
150-250
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