2N5401 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP high-voltage transistor

RoHS
2N5401
2N5401 TRANSISTOR (PNP)
D _FEATURE
T _{Power dissipation}
.,L ^{PCM : 0.625 W (Tamb=25℃)}
Collector current
I_CM : - 0.6 A
O Collector-base voltage
V_(BR)CBO : -160 V
C _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-base breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
C _{Emitter cut-off current}
LE DC current gain
E _{Collector-emitter saturation voltage}
J _{Base-emitter saturation voltage}
WE^{Transition frequency}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
f_T
Test conditions
Ic= -100 µA, IE=0
Ic= -1 mA, IB=0
IE= -10 µA, IC=0
VCB= -120 V, IE=0
VEB= -4 V, IC=0
VCE= -5 V, IC=-1 mA
VCE= -5 V, IC= -10 mA
VCE= -5 V, IC=-50 mA
IC= -50 mA, IB= -5 mA
IC= -50 mA, IB= -5 mA
VCE=-5V, IC=-10mA
f =30MHz
MIN
-160
-150
-5
80
80
50
100
TYP
MAX
-0.1
-0.1
UNIT
V
V
V
µA
µA
250
-0.5
V
-1
V
MHz
CLASSIFICATION OF h_FE(2)
Rank
A
B
C
Range
80-160
120-180
150-250
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