2N5172 Datasheet, PDF (1/1 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

RoHS
2N5172
2N5172 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _{PCM : 0.625 W (Tamb=25℃)}
.,L ^{Collector current}
I_CM : 0.5 A
Collector-base voltage
O _{V(BR)CBO : 25 V}
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO—92
1. EMITTER
2. COLLECTOR
3. BASE
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
ON Parameter
Collector-base breakdown voltage
R _{Collector-emitter breakdown voltage}
T _{Emitter-base breakdown voltage}
C _{Collector cut-off current}
E _{Emitter cut-off current}
L _{DC current gain}
E Collector-emitter saturation voltage
WEJ ^{Base-emitter saturation voltage}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
Test conditions
Ic= 10µA, IE=0
Ic= 10 mA, IB=0
IE= 10µA, IC=0
VCB= 25V, IE=0
VEB= 5 V, IC=0
VCE= 10V, IC= 10mA
IC=10mA, IB=1mA
IC=10mA, IB=1mA
MIN TYP
25
25
5
100
MAX
0.1
0.1
500
0.25
1.2
UNIT
V
V
V
µA
µA
V
V
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