2N4401 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN switching transistor

RoHS
2N4401
2N4401 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _{PCM : 0.625 W}
Collector current
.,L ^{ICM : 0.6 A}
Collector-base voltage
V_(BR)CBO : 60 V
(Tamb=25℃)
O _{Operating and storage junction temperature range}
C _{TJ, Tstg: -55℃ to +150℃}
TO-92
1.EMILTTER
2.BASE
3. COLLECTOR
123
IC _{ELECTRICAL CHARACTERISTICS ( Tamb=25℃ unless otherwise specified)}
N _Parameter
O _{Collector-base breakdown voltage}
Collector-emitter breakdown voltage
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
C _{Collector cut-off current}
E _{Emitter cut-off current}
L _{DC current gain}
E _{Collector-emitter saturation voltage}
Base-emitter saturation voltage
WEJ ^{Transition frequency}
Symbol
Test conditions
MIN MAX UNIT
V(BR)CBO
Ic=100µA , IE=0
60
V
V(BR)CEO
IC= 1mA , IB=0
40
V
V(BR)EBO
ICBO
IE=100µA, IC=0
VCB=50 V , IE=0
6
V
0.1
µA
ICEO
VCE=35 V , IB=0
0.1
µA
IEBO
VEB=5V , IC=0
0.1
µA
hFE 1
VCE=1 V, IC= 150mA
100
300
VCE(sat)
IC=150 mA, IB=15mA
0.4
V
VBE(sat)
IC= 150 mA, IB=15mA
0.95
V
VCE= 10V, IC= 20mA
fT
250
f = 100MHz
MHz
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