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| 1SS388 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – DIODE (HGH SPEED SWITCHING APPLICATION) | |||
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RoHS
1SS388
WEJ ELECTRONIC CO.,LTD 1SS388HighSpeedSWITCHINGDiodes
FEATURES
Small pacakage
Low forward voltage : VF3 = 0.54 ( typ )
Low reverse current : IR = 5uA ( typ )
SOD-523
1.20
0.30
0.80
1.60
0.10
0.65
MARKING: S3
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 â
Parameter
Symbol
Limits
Peak reverse voltage
VRM
45
DC reverse voltage
VR
40
Maximum (peak) forward current
IFM
300
Average forward current
IO
100
Surge current (10ms)
IFSM
1000
Power dissipation
PD
150
Junction temperature
Tj
125
Storage temperature
Tstg
-55-125
Operating temperature range
Topr
-40-100
SOD-523
Unit
V
V
mA
mA
mA
mW
â
â
â
Electrical Ratings @TA=25â
Parameter
Forward voltage
Reverse current
Symbol
VF1
VF2
VF3
IR
Min.
Typ. Max. Unit Conditions
0.28
V
IF=1mA
0.36
V
IF=10mA
0.54 0.60
V
5
μA
IF=50mA
VR=10V
Total capacitance
CT
18
25
pF
VR=0,f=1MHZ
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
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