1SS387 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

RoHS
1SS387
1SS387 High Speed SWITCHING Diodes
FEATURES
Small package
WEJ ^{ELECTRONIC Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃}
Parameter
Symbol
Limits
Peak reverse voltage
DC reverse voltage
Peak forward current
Mean rectifying current
Surge current (10ms)
Junction temperature
Storage temperature
Electrical Ratings @T_A=25℃
Parameter
Forward voltage
Reverse current
V_RM
V_R
I_FM
I_O
I_surge
T_j
T_stg
85
80
200
100
1000
125
-55~+125
Symbol Min. Typ. Max. Unit
V_F1
0.62
V
V_F2
0.75
V
V_F3
1.2 V
I_R1
0.1 μA
I_R2
0.5 μA
CO.,LTD ^1.20
0.30
0.80
1.60
0.10
0.65
SOD-523
Unit
V
V
mA
mA
mA
℃
℃
Conditions
I_F=1mA
I_F=10mA
I_F=100mA
V_R=30V
V_R=80V
Capacitance between terminals
C_T
3.0 pF
V_R=0,f=1MHZ
Reverse recovery time
t_rr
4
ns V_R=6V,I_F=10mA,R_L=100Ω
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