1SS245_15 Datasheet, PDF (1/3 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – High-voltage switching diode

RoHS
ISS245
High-voltage switching diode _{TD Features}
.,L ^{1. Small surface mounting type}
2. High reliability
3. V_RM=250V
CO _Applications
High voltage switch and general purpose rectification
IC _Construction
N _{Silicon epitaxial planar}
O _{Absolute Maximum Ratings}
TR ^Tj=25
Parameter
Peak reverse voltage
C _{DC reverse voltage}
Surge current
E _{Mean rectifying current}
L _{Peak forward current}
Power dissipation
E _{Junction temperature}
Storage temperature range
Test Conditions
t_p=1s
Type
Symbol
Value
Unit
V_RM
250
V
V_R
220
V
I_Surge
1
A
I_O
200
mA
I_FM
625
mA
P
300
mW
T_j
175
T_stg
-65~+175
J _{Maximum Thermal Resistance}
E_Tj=25
W ^Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
on PC board 50mm 50mm 1.6mm
R_thJA
500
K/W
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