1SS133 Datasheet, PDF (1/3 Pages) Rohm – Switching diode

RoHS
1SS133
High-speed switching diode _{TD Features}
.,L ^{1. Glass sealed envelope.}
2. High reliability.
3. High speed.
O _Applications
C _{High speed switching}
Construction
IC _{Silicon epitaxial planar}
N _{Absolute Maximum Ratings}
O Ta=25
Parameter
R _{Peak reverse voltage}
DC reverse voltage
T _{Peak forward current}
Mean rectifying current
Symbol
V_RM
V_R
I_FM
I_o
Limits
90
80
400
130
Unit Parameter
Symbol Value Unit
V
Surge current(1s)
I_surge
600
mA
V
Power dissipation
P
300
mW
mA Junction temperature
T_j
175
mA Storage temperature
T_stg -65~+175
EC _{Electrical Characteristics}
L _Ta=25
E_Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
V_F
-
0.92 1.2
V I_F=100mA
J _{Reverse current}
I_R
-
0.02 0.5
A V_R=80V
Capacitance between terminals
C_T
-
1.55
2
pF V_R=0.5V,f=1MHz
WE^{Reverse recovery time}
t_rr
-
1.5
4
ns V_R=6V,I_F=10mA,R_L=50
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