1N6263W Datasheet, PDF (1/2 Pages) Diodes Incorporated – SURFACE MOUNT SCHOTTKY BARRIER DIODE

RoHS
1N6263W
WEJ ELECTRONIC CO.,LTD Features
· Low Forward Voltage Drop
· Guard Ring Construction for Transient
Protection
· Fast Switching Time
· Low Reverse Capacitance
· Surface Mount Package Ideally Suited for
Automatic Insertion
SOD-123
2.70
3.70
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Symbol
1N6263W
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
60
V
V_R
RMS Reverse Voltage
V_R(RMS)
42
V
Forward Continuous Current
I_F
15
mA
Non-Repetitive Peak Forward Surge Current @ t £ 1.0s
@ t = 10ms
I_FSM
50
2.0
mA
A
Power Dissipation (Note 1)
P_d
400
mW
Thermal Resistance, Junction to Ambient Air (Note 1)
R_qJA
375
K/W
Operating and Storage Temperature Range
T_j, T_STG
-65 to +175
°C
Electrical Characteristics ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Reverse Breakdown Voltage (Note 2)
Reverse Leakage Current
Forward Voltage Drop
Junction Capacitance
Reverse Recovery Time
Symbol Min
Typ
Max Unit
Test Condition
V_(BR)R
60
¾
¾
V
I_R = 10mA
I_RM
¾
¾
200
nA VR = 50V
V_FM
¾
¾
0.41
1.0
V
IF = 1.0mA
I_F = 15mA
C_j
¾
2.0
¾
pF VR = 0V, f = 1.0MHz
t_rr
¾
1.0
¾
ns
I_F = I_R = 5.0mA
I_rr = 0.1 x I_R, R_L = 100W
Note: 1. Valid provided that terminals from the case are maintained at ambient temperature.
2. Test period <3000ms.
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