1N6263 Datasheet, PDF (1/2 Pages) STMicroelectronics – SMALL SIGNAL SCHOTTKY DIODE

RoHS
1N6263
WEJ ELECTRONIC CO.,LTD FEATURES
For general purpose applications
Metal-on-silicon junction Schottky barrier which is protected by a PN
junction guard ring.The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,steering,biasing and
coupling diodes for fast switching and low logic level applications
These diodes are also available in the Mini-MELF case with type
designation LL6263,in the Micro-MELF case with type designation
MCL6263
DO-35
0.02(0.52)
MAX
DIA
MECHANICAL DATA
Case:DO-35 Glass CASE
Polarity:Color band denotes cathode end
Weight:Approx.0.13gram
0.079(2.0)
MAX
DIA
Dimensions in inches and (millimeters)
ABSOLUTE RATINGS(LIMITING VALUES)
SYMBOLS
VALUE
Peak Reverse Voltage
VRRM
60
Power Dissipation (infinite Heat Sink)
Ptot
400
Maximum Single cycle surge 10 s square ware
IFSM
2.0
Junction Temperature
TJ
125
Storage Temperature Range
TSTG
-55 to +150
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
UNITS
V
mV
A
C ^O
C ^O
ELECTRICAL CHARACTERISTICS
(Ratings at 25^OC ambient temperature unless otherwise specified)
SYMBOLS
Min.
Reverse Breakover Voltage at IR=10 A
VR
60
Leakage Current at VR=50V
IR
Forward voltage drop at IF=1mA
IF=15mA
VF
TYP.
MAX.
200
0.41
1.0
UNITS
V
nA
V
Junction Capacitance at VR=0V,f=1MHz
CJ
2.0
pF
Reverse Recovery time at IF=IR=5mA,
recover to 0.1 IR
Trr
1
ns
Thermal resistance
R JA
0.3
K/W
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