1N60P Datasheet, PDF (1/2 Pages) Semtech Corporation – POINT CONTACT GERMANIUM DIODE

RoHS
1N60P
Schottky Barrier Diode
Features
1. High reliability
2. Low reverse current and low forward voltage
Applications
WEJ ^{ELECTRONIC Low current rectification and high speed switching}
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
T_j=25
Parameter
Repetitive peak reverse voltage
Test Conditions
Peak forward surge current
t_p 1 s
Forward continuous current
T_a=25
Storage temperature range
Type
1N60
1N60P
1N60
1N60P
1N60
1N60P
Symbol
V_RRM
V_RRM
I_FSM
I_FSM
I_F
I_F
T_stg
Maximum Thermal Resistance
T_j=25
Parameter
Junction ambient
Test Conditions
on PC board 50mm 50mm 1.6mm
Symbol
R_thJA
CO.,LTD
Value
Unit
40
V
45
V
150
mA
500
mA
30
mA
50
mA
-65~+125
Value
Unit
250
K/W
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