1N5221B Datasheet, PDF (1/5 Pages) Vishay Siliconix – Silicon Z-Diodes

RoHS
1N5221B-1N5267B
Zener diode _{TD Features}
.,L ^{1. High reliability}
2. Very sharp reverse characteristic
3. Low reverse current level
4. V_Z-tolerance±5%
CO _Applications
Voltage stabilization
NIC _{Absolute Maximum Ratings}
O Tj=25℃
Parameter
R _{Power dissipation}
Z-current
T _{Junction temperature}
Storage temperature range
Test Conditions
T_amb≤75℃
Type
Symbol
Value
Unit
P_V
500
mW
I_Z
P_V/V_Z
mA
T_j
200
℃
T_stg
-65~+200
℃
EC _{Maximum Thermal Resistance}
L Tj=25℃
Parameter
E _{Junction ambient}
Test Conditions
I=9.5mm(3/8”) T_L=constant
Symbol
R_thJA
Value
300
Unit
K/W
J _{Electrical Characteristics}
ETj=25℃
Parameter
W^{Forward voltage}
Test Conditions
I_F=200mA
Type
Symbol Min Typ Max Unit
V_F
1.1 V
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