1N4448 Datasheet, PDF (1/3 Pages) Rectron Semiconductor – SIGNAL DIODE

RoHS
1N4448
High-speed switching diode
Features
1. High reliability
2. High speed (t_rr 4 ns)
Applications
WEJ ELECTRONIC Extremefastswitches
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
T_j=25
Parameter
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature range
Test Conditions
t_p=1 s
V_R=0
I=4mm T_L 25
Type
Maximum Thermal Resistance
T_j=25
Parameter
Junction ambient
Test Conditions
I=4mm T_L=constant
Symbol
V_RRM
V_R
I_FSM
I_FRM
I_F
I_FAV
P_V
T_j
T_stg
Symbol
R_thJA
CO.,LTD
Value
Unit
100
V
75
V
2
A
500
mA
300
mA
150
mA
500
mW
175
-65~+175
Value
Unit
350
K/W
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