1N4150 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed diodes"

RoHS
1N4150
High-speed switching diode
Features
1. High reliability
2. High forward current capability
Applications
High speed switch and general purpose use
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Construction
Silicon epitaxial planar
Absolute Maximum Ratings
T_j=25
Parameter
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature range
Test Conditions
t_p=1 s
V_R=0
Type
Symbol
V_RRM
V_R
I_FSM
I_F
I_FAV
P_V
T_j
T_stg
Maximum Thermal Resistance
T_j=25
Parameter
Junction ambient
Test Conditions
on PC board 50mm 50mm 1.6mm
Symbol
R_thJA
CO.,LTD
Value
Unit
50
V
40
V
4
A
600
mA
300
mA
500
mW
175
-65~+175
Value
Unit
500
K/W
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